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| BAT 14-099R Silicon Crossover Ring Quad Schottky Diode * Medium barrier diode for double balanced mixer, phase detectors and modulators 3 4 2 1 4 3 VPS05178 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 14-099R Maximum Ratings Parameter Forward current Marking S8s Pin Configuration Package 1=A1/C4 2=C2/A3 3=C1/A2 4=C3/A4 SOT-143 Symbol IF Ptot Tj Top Tstg Value 90 100 150 -55 ... 150 -55 ... 150 Unit mA mW C C C Total power dissipation, TS 70 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) RthJA RthJS 1020 780 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm) 1 Oct-07-1999 BAT 14-099R Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics (per diode) Forward voltage IF = 1 mA IF = 10 Forward voltage matching 1) IF = 10 mA AC characteristics (per diode) Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10mA / 50mA 1) VF is difference between lowest and highest VF in component Symbol min. VF VF - Values typ. max. Unit V 0.4 0.48 20 mV CT RF - 0.38 5.5 - pF Forward current IF = f (VF ) TA = Parameter 10 2 BAT 14-099R EHD07089 Forward current IF = f (TA *; TS) * Package mounted on alumina BAT 14-099R EHD07090 100 F mA 10 1 TA = -40 C 25 C 85 C 125 C 10 0 F mA 80 TS TA 60 40 10 -1 20 10 -2 0.0 0.5 V 1.0 VF 0 0 50 100 C 150 TA ; TS 2 Oct-07-1999 |
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